PART |
Description |
Maker |
MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32 JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32 Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
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Macronix International Co., Ltd. MCNIX[Macronix International]
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NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28 65,536-Bit (8192 x 8) CMOS EPROM 64KBit (8192 x 8) CMOS EPROM [Life-time buy]
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Fairchild Semiconductor, Corp.
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M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12V |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32 512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28 Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
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Macronix International Co., Ltd. MCNIX[Macronix International]
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
TC531024F-12 TC531024F-15 TC531024P-12 TC531024P-1 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
List of Unclassifed Manufacturers ETC[ETC]
|
HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CX |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
Sony, Corp. SONY[Sony Corporation]
|
NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
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M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
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